Producer Selectra Mo Etch

As 3D NAND architectures continue to scale to higher layer counts, emerging metal integration steps – such as wordline molybdenum (Mo) separation – are pushing conventional patterning approaches beyond their limits. Increasing aspect ratios and constrained geometries make it difficult for wet etch processes to achieve consistent top-to-bottom material removal, leading to variability, loading effects, and compromised device performance. To enable continued scaling, device makers require highly selective and controlled etch technologies that can precisely remove target metals deep within complex structures while preserving surrounding materials.

The Producer^® Selectra^® Mo Etch system introduces a new capability for selective metal removal, enabling precise and uniform Mo wordline separation in advanced 3D NAND devices. Designed to address the limitations of wet etch, Selectra Mo Etch leverages engineered process control and advanced gas delivery to achieve superior top-to-bottom loading performance and tight profile control within high-aspect-ratio features. This selective dry etch approach enables improved uniformity and repeatability across the wafer, while supporting critical scaling requirements for next-generation memory nodes. The system has been validated in high-volume manufacturing, establishing a new benchmark for selective metal etch performance and enabling a transition away from legacy wet processes.

Selectra Mo Etch extends Applied Materials’ leadership in selective processing within the Producer^® platform, building on the company’s foundational Selectra technology for extreme selectivity etch. This advanced selective metal etch capability expands the Selectra portfolio beyond dielectric and silicon applications, creating new opportunities in advanced metal integration across NAND, DRAM , and Logic devices. As part of Applied’s broader materials engineering ecosystem, Selectra Mo Etch complements selective deposition, etch, and integrated solutions – helping customers solve the most complex patterning and materials challenges in advanced memory and logic devices.