Patterning Technologies and Device Scaling

 

As we progress from 14 to 7nm devices and beyond, SADP and SAQP will be required for some layers and LE with either 193i or EUV lithography for others.
EUV will likely be used to create cuts and vias in some of the lower metal layers.

semiconductor processes video

14nm Video 1280 x 720

semiconductor processes video

7nm Video 1280 x 720

14nm 4 Stack

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14nm Full Stack

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7nm 4 Stack

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7nm_4stack_full.png
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7nm Full Stack

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14nm_4stack_full.png
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7nm EUV

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6 MB
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