Centura Xtera Epi

As the semiconductor industry pushes the traditional boundaries of chip performance, the shift to 3D architectures – like gate-all-around (GAA) transistors for logic and vertical FinFETs for memory – is reshaping device design. These new advanced structures demand precision epitaxial growth in high aspect ratio environments.

Applied Materials Centura™ Xtera™ Epi is a breakthrough selective epitaxy platform engineered to meet the new demands of next-generation logic and memory devices. Centura Xtera Epi is purpose-built to address the toughest challenges in selective epitaxial growth, offering an innovative architecture that empowers chipmakers to unlock new applications while delivering a low-risk, high-productivity solution that scales seamlessly into high-volume manufacturing. Key innovations include:

• A tighter deposition cross section, which enhances precursor replenishment for improved uniformity and high-quality epitaxy
• Optimized chemistry delivery, which enables the precise chemistry manipulation required for the epitaxial growth of complex materials
• Advanced monitoring hardware, which provides real-time wafer temperature monitoring and control for process stability

With the smallest process volume for epitaxy, Centura Xtera Epi opens new frontiers in process and materials engineering, empowering chipmakers to enhance performance and reduce energy and material consumption. Already adopted by leading foundry logic customers, Centura Xtera Epi sets a new standard in epitaxy, exemplifying Applied Materials’ commitment to cutting-edge solutions that drive the future of semiconductor manufacturing. Its advanced architecture not only lays the foundation for future developments in epitaxial process control – such as improved radial gas concentration and edge profile management – but also enables manufacturers to confidently scale epitaxy as device complexity grows, consistently delivering performance, reliability, and efficiency across next-generation nodes.