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Centura® iSprint™ Tungsten ALD/CVD

The Applied Centura iSprint Tungsten ALD/CVD system provides complete contact/via fill for structures with aspect ratios ranging from 4:1 to 7:1 and extends the capability of tungsten technology to 20nm/16nm for logic and memory applications.

The system combines innovative ALD tungsten nucleation layer technology with the high-throughput Sprint CVD tungsten bulk fill process to deliver CMP-compatible tungsten plugs.

The ALD process reduces the nucleation thickness from typical CVD values of 300Å to as thin as 12Å, while maintaining excellent barrier performance for reliable, repeatable integration with PVD Ti/MOCVD TiN liner/barriers.

此外,iSprint 系统通过优化的 ALD 沉积室设计,实现了高产能和低耗材成本;沉积室配备专有的快速输气系统,且体积小,用更少的气即可完成快速有效的气体充换。