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Mainstream Technologies
3D NAND
Material innovations and stack engineering enabling cell scaling and performance improvements
DRAM → 3D DRAM
Material stack engineering for DRAM and 3D DRAM cell scaling and optimization
FinFET → GAA
HKMG stack engineering and metrology supporting FinFET to 3D GAA/nanosheet transition
Emerging Technologies
Phase Change Memory
Captures full physics of chalcogenide materials to enable Phase Change Memory (PCM) scaling
Ovonic Threshold
Full physical/defect-centric model to enable Ovonic Threshold Switching (OTS) selector optimization for advanced memories
Resistive RAM
Reproduce ion/vacancy diffusion, chemical reactions, statistics for AI applications
Ferroelectric
Materials and atomic defect focus to unlock ferroelectric device (FeFET, FRAM) performance and reliability