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The pattern-shaping process removes selected areas from the surface of the wafer in a lateral direction so that spacing between line or via ends (tip-to-tip spacing) is minimized and feature density is maximized.
Pattern shaping uses ribbon beam energy and materials removal technologies to uniquely extract an adjustable, angled reactive ribbon beam from an inductively coupled plasma that precisely sculpts patterns to the desired shape and dimensions. Pattern shaping is used to reshape EUV patterns, reducing spacing and increasing density without the need for EUV double patterning, thereby saving the energy, materials, water and cost of a second EUV patterning sequence.