Centura DxZ CVD 200mm
The need for advanced 200mm Chemical Vapor Deposition technology has increased to support fabrication requirements in advanced MEMS, power devices and packaging markets. Ultra thick oxides (≥20µm), low temperatures (180° to 350°C), conformal, low wet-etch-rate (WER) films and doped films with tunable refractive indices (RI) now characterize the manufacturing requirements for the growing class of emerging technology devices.
These films join the broad portfolio of processes available on the Centura DxZ CVD system. The foundation of Applied’s strength in dielectric CVD films began with TEOS, Silane-based oxides and nitrides and expanded to leadership in advanced chip-making processes, including Low k, Strain engineering, and Litho-enabling films.
In addition, the Centura DxZ SACVD system (Sub-Atmospheric CVD) delivers a variety of doped (phosphine, boron, and fluorine) and undoped gap fill solutions. These processes address applications like Shallow-Trench Isolation (STI), Pre-Metal Dielectric (PMD), Inter-Layer Dielectric (ILD) Inter-Metal Dielectric (IMD), among others.
The Centura DxZ CVD chamber is a non-consumable, resistive heater and ceramic parts and offers significant improvements in cost, throughput, ease of serviceability, and reliability. The DxZ process kit is also comprised of zero consumable parts. Utilizing a single wafer multi-chamber architecture, the Centura DxZ delivers throughput up to 100WPH (3,000Å PE TEOS and Plasma Silane) and 55wph (3000Å SACVD USG). Efficient gas utilization for both deposition and clean chemistries are achieved through the symmetrical design and small chamber volume, contributing to a low overall cost of ownership.