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Centura® iSprint™ Tungsten ALD/CVD

The Applied Centura iSprint Tungsten ALD/CVD system provides complete contact/via fill for structures with aspect ratios ranging from 4:1 to 7:1 and extends the capability of tungsten technology to 20nm/16nm for logic and memory applications.

The system combines innovative ALD tungsten nucleation layer technology with the high-throughput Sprint CVD tungsten bulk fill process to deliver CMP-compatible tungsten plugs.

The ALD process reduces the nucleation thickness from typical CVD values of 300Å to as thin as 12Å, while maintaining excellent barrier performance for reliable, repeatable integration with PVD Ti/MOCVD TiN liner/barriers.

iSprint 系統也提供高產能和低消秏成本,並具備最佳化的 ALD 反應室設計。該設計提供擁有專利的快速氣體供應系統,而其小體積的反應室,可以用較少的氣體就可達成快速、有效的沖洗目的。