skip to main content

Varian VIISta® PLAD

  • High density, low energy plasma – high productivity, no substrate etching or damage
  • Advanced RF technology provides unique deposition control
  • Pulsed DC bias provides accurate energy, depth, and dose control with wide process window
  • Variable duty factor provides process flexibility
  • Closed loop faraday system provides secure process protection for mass production

Varian’s ultra-high dose implant technology delivers a production-proven method to rapidly implant high dopant concentrations over the entire wafer surface using a low-energy process that will not disturb sensitive circuit features.

The VIISta PLAD Provides

  • Required device performance without substrate etching or damage
  • Industry leading dose retention and uniformity
  • Broad process window with accurate doping profile
  • Minimized production risk with in-situ dose control

Common Platform

  • Decreased time to first silicon
  • Greater productivity across all applications
  • Highest industry throughput
  • Cost-effective training
  • Increased return on investment