Applied Materials invites you to join us for a technical symposium and reception at the Ambassador Hotel Hsinchu. The symposium will offer an opportunity for in-depth technical discussion of key challenges and advances in next-generation logic transistor design and manufacture.

The modern MOSFET era has seen numerous changes in transistor materials and fabrication, a trend that is expected to accelerate from the 20nm node onward. 3D represents a host of new challenges, however, not the least of which is the increase in number of process steps involved. Others involve advanced patterning, atomic-precision etch, interface engineering, and conformal doping of 3D surfaces.

Distinguished guest speakers from IBM, SK hynix, Technische Universität München, and Toshiba will address these challenges and emerging solutions.

We look forward to welcoming you!