Endura CuBS RFX PVD

Applied Materials extends copper barrier/seed PVD (Physical Vapor Deposition) technology to the 3x/2x node and beyond for Logic and Memory applications with the Applied Endura CuBS (Copper Barrier/Seed) RFX PVD system. The SIP (Self-Ionized Plasma) EnCoRe II Ta(N) barrier and EnCoRe II RFX Cu seed process chambers feature high ionization PVD technology that delivers full-coverage, low-temperature film deposition, with minimal overhang and smooth morphology.

The tunable thickness capability of the EnCoRe II Ta(N) chamber enables customers to lower barrier thickness for line resistance scaling to the 3x/2x nodes while maintaining excellent electromigration and stress migration performance through superior bottom and sidewall coverage. For the Cu seed layer, the EnCoRe II RFX Cu chamber employs innovative magnetron motion, flux control, and a high resputter ratio regime to further enhance conformal coverage.

These technologies overcome gap fill extendibility issues (e.g., end-of-line voids at the wafer edge or post-CMP defects) on aggressive dual damascene and trench features and extend the ECP (electrochemical plating) fill window.

Aktiv Preclean
To address the increasing importance of interfaces as geometries shrink, Applied offers various preclean technologies to ensure interface integrity without impacting critical dimensions or material properties. The Endura CuBS RFX system features the innovative Aktiv Preclean [chamber or process] which provides breakthrough cleaning technology for efficient removal of polymeric residues and reduction of CuO while protecting porous low k inter-level dielectric (ILD) films, such as Black Diamond II. Unlike conventional reactive preclean methods, the Aktiv Preclean process results in no significant change in k-value, thus enabling the transition to next-generation low k dielectrics.

The Applied Endura CuBS RFX PVD system sequentially deposits the Ta(N)/Ta barrier followed by the Cu seed layer under high-vacuum conditions. Integration of the complete sequence, including the innovative Aktiv Preclean [chamber or process], on the Endura platform ensures excellent film adhesion and oxide-free interfaces, while preserving k-value integrity for low via resistance and high device reliability.

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