Next-Generation Logic

Applied is prepared to support its customers' semiconductor roadmaps with the technology to enable future chip designs, including the transition from planar to three-dimensional, multi-gate transistors.

Centris AdvantEdge Mesa Etch
 Fin, gate and spacer formation
Centura Epi with Siconi
Recess formation and epitaxial deposition
Centura Conforma Plasma Doping
Conformal doping of transistor channel
Centura Advanced Gate Stack
Critical high-k material modification

Endura Avenir RF PVD
Unique single-wafer metal gate stack tool
Producer Eterna Flowable CVD
Bottom-up fill for 30:1 aspect ratio
Reflexion LK CMP
Precise gate definition
Next-Generation Logic Products

Beyond high-k/metal gate technology, leading logic manufacturers are exploring multi-gate transistors, such as FinFETs, as a promising route to continue Moore’s Law. By surrounding the transistor channel with multiple gates, these designs can increase switching and suppress leakage current to deliver faster logic devices with lower power consumption.

Applied offers sophisticated patterning, implant, and thin film deposition solutions to meet the new manufacturing challenges posed by multi-gate transistor structures, which include the fabrication of the tall, narrow silicon "fins" and multiple gates with precisely matched electrical characteristics.

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