Within the next few technology generations, manufacturers are expected to move from planar structures to three-dimensional transistors with multiple gates, such as FinFETs. These new designs will allow them to create smaller, more powerful microprocessors and other logic devices. Working with customers, Applied has developed the systems required to meet this new manufacturing challenge.
Beyond high-k/metal gate technology, leading logic manufacturers are exploring multi-gate transistors, such as FinFETs, as a promising route to continue Moore’s Law. By surrounding the transistor channel with multiple gates, these designs can increase switching and suppress leakage current to deliver faster logic devices with lower power consumption.
Applied offers sophisticated patterning, implant, and thin film deposition solutions to meet the new manufacturing challenges posed by multi-gate transistor structures, which include the fabrication of the tall, narrow silicon "fins" and multiple gates with precisely matched electrical characteristics.
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