The heart of the transistor is its gate – the area where the critical on-off switching takes place. Using new metal materials in this region enables faster, more reliable performance. Applied has developed an entire portfolio of solutions to streamline this important transition for chipmakers.
As new chips are designed with smaller and more closely-packed transistors, leading chipmakers must use different materials, such as new metals and "high-k" dielectrics to increase chip switching speed and control current leakage.
Applied has developed a comprehensive portfolio of integrated systems for building the entire high-k/metal gate transistor structure with interfaces atomically engineered to optimize performance. These uniquely flexible systems enable high-temperature etch, atomic layer deposition, ion implantation, and ultra-high vacuum metallization technologies to address multiple metal gate integration schemes.
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