VIISta PLAD

VIISta PLAD
Varian’s ultra-high dose implant technology delivers a production-proven method to rapidly implant high dopant concentrations over the entire wafer surface using a low-energy process that will not disturb sensitive circuit features.

The VIISta PLAD Provides

• Required device performance without substrate etching or damage
• Industry leading dose retention and uniformity
• Broad process window with accurate doping profile
• Minimized production risk with in-situ dose control

The VIISta PLAD Features

• High density, low energy plasma – high productivity, no substrate etching or damage
• Advanced RF technology provides unique deposition control
• Pulsed DC bias provides accurate energy, depth, and dose control with wide process window
• Variable duty factor provides process flexibility
• Closed loop faraday system provides secure process protection for mass production

Common Platform

• Decreased time to first silicon
• Greater productivity across all applications
• Highest industry throughput
• Cost-effective training
• Increased return on investment