Metal Gate Transistors

VIISta 900XP

The VIISta 900XP sets the standard for precision, cleanliness, productivity, and production worthiness in the medium current ion implant market. In addition, the extended energy range of the 900XP makes it the most productive solution for sub-MeV well applications.

The advanced design of the VIISta 900XP ensures precision doping for high-volume manufacturing. Repeatable and accurate implant angle control is a critical parameter for advanced devices. The Varian Positioning System (VPS) delivers accurate and repeatable angle control over the full applications envelope.

The beamline architecture of the VIISta 900XP delivers low metals, particle, cross-species, and contamination levels. A unique pre-filter magnet removes the majority of cross-species right at the source. The dual-magnet architecture isolates the wafer from beam-borne particles in the analyzer magnet and the mass resolving aperture regions.

Delivering 500WPH mechanical throughput, the VIISta 900XP provides the highest implant productivity. In addition to Varian’s patented single-wafer parallel path wafer handling, fast beam set-up times and an option for higher beam current add to the impressive overall tool productivity.

The energy extension of the VIISta 900XP enables a highly productive alternative solution for sub-MeV well implants. Operating at 300keV and 600keV with + and ++ charge states respectively, the VIISta 900XP is more productive than traditional batch high energy tools for sub-MeV well applications.