Centura Tetra X Advanced Reticle Etch

The Applied Centura Tetra X Advanced Reticle Etch system is the most advanced mask etcher for 22nm production and beyond. As the semiconductor industry continues to extend the limits of current lithography technologies, Tetra X plays a critical role by enabling resolution enhancement techniques, such as optical proximity correction (OPC), and by offering the capability to etch the entire spectrum of photomask materials.

Tetra X is the only system that delivers the vital nanomanufacturing technology required for etching 22nm advanced binary and phase-shift photomasks (PSM). It offers unique capabilities, such as the ability to endpoint ultra-low-load thin film chrome and reduces critical dimension (CD) loss to <5nm—enabling the use of aggressive OPC techniques in customers’ most critical device layers. The system offers zero defect etch processes with best-in-class CD control for chrome, quartz, molybdenum silicon oxynitride (MoSiON), and various new materials for next-generation lithography applications.

Employing advanced processes, the system can etch a wide variety of PSM, advanced binary, and extreme ultra-violet masks. This minimizes dependencies on process libraries, tool operation complexities, development cycle times, and expert users. The world’s leading mask shops rely on the family of Tetra Advanced Reticle Etch systems to etch the most advanced masks with the highest yields to date.

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