Producer Snow PECVD

Recent advances in transistor performance are being fueled by successfully integrating specialized materials in the transistor gate stack: high-k dielectrics that interface with unique metals for the gate electrode, which often interface with oxide layers.

Many of the metals used in development and production are susceptible to oxidation. As gate lengths shrink to less than 45nm, oxidation of even a few nanometers begins to represent a significant percentage of the gate geometry, becoming increasingly detrimental to device performance and reliability.

Applied Producer Snow delivers high-quality, highly conformal oxide films that do not oxidize today's gate metals, eliminating one of the biggest challenges to advanced gate stack scaling and making it ideal for critical applications. Using a novel low temperature (200ºC -400ºC) PECVD process, Snow films are more conformal than conventional PECVD films, for 4X and 3X logic and flash technologies, with thickness control to within 100Ǻ and less than 5% pattern loading.

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