Endura Versa XLR W PVD

As devices continue to scale down, the speed of data transfer from dynamic random access memory (DRAM) structures becomes a factor limiting system performance. Speeding this data transfer requires faster periphery gates.

The Endura Versa XLR W PVD system extends Applied’s leadership in PVD tungsten silicide technology by enabling deposition of tungsten films with the lowest-available resistivity. Memory manufacturers can now extend tungsten for gate stack to more advanced memory nodes and future three-dimensional architectures without changing their process flows or integration schemes. And designers benefit from the greater flexibility this advance offers for circuit layout. In addition, a doubling of the process kit service life over that of current PVD tungsten technology translates into a 10% reduction in the cost of consumables per wafer.

• Key Messages: PVD Technology for Advanced DRAM (45kB, PDF)
• Press Release: Applied Materials Introduces Innovations for Building Faster DRAM Chips