Endura iCuBS ALD/PVD

The Endura iCuBS system integrates ALD (Atomic Layer Deposition) TaN barrier and SIP EnCoRe II Cu PVD (Physical Vapor Deposition) seed technologies on the high-productivity Endura mainframe. This breakthrough TaN barrier takes advantage of ALD technology, depositing ultra-thin films one atomic layer at a time with precise thickness control, to deliver 100% conformal step coverage and good particle performance. ALD TaN is an effective barrier with advanced low k dielectrics, including Black Diamond/Black Diamond II, and integrates fully with ECP (Electrochemical Plating) and CMP (Chemical Mechanical Planarization) processes. The conformal ALD TaN barrier combined with SIP EnCoRe II Cu PVD seed results in low overhang, enabling void-free copper fill.