Endura HAR Cobalt PVD

As devices continue to scale down, the speed of data transfer from dynamic random access memory (DRAM) structures becomes a factor limiting system performance. Speeding this data transfer requires faster periphery gates.

The Endura HAR Cobalt PVD system integrates Siconi pre-silicide clean with PVD cobalt and TiN cap deposition for the direct contact application in the DRAM periphery. Cobalt silicide enables the lowest resistance for high aspect ratio periphery contacts, making possible higher drive current at lower voltage and outperforming current CVD titanium silicide technology.

• Key Messages: PVD Technology for Advanced DRAM (45kB, PDF)
• Press Release: Applied Materials Introduces Innovations for Building Faster DRAM Chips