Endura Extensa TTN

The Applied Endura Extensa TTN offers customers maximum integration flexibility in transitioning to copper interconnect for improved device performance. Its robust deposition technology delivers the only production-worthy process capable of fulfilling barrier requirements for Flash and DRAM at 5Xnm and below.

The system's deposition process addresses the need for scalable copper barrier and copper-aluminum or copper-tungsten diffusion barrier technology. Offering uniquely broad PVD manufacturing capability for titanium, metallic titanium nitride (TiN), and fully-nitrided TiN deposition in the same chamber without hardware changes, Extensa TTN can also accommodate Cs liner and bond pad applications, and addresses future silicide gate cap needs.

Extensa TTN's highly uniform step coverage and sheet resistance (non-uniformity <3% 1σ) allows a thinner barrier stack to be deposited, producing low overhang, which, in turn, promotes void-free gap fill. The chamber is equipped with grounded, single-piece, CleanCoat™ aluminum kits to deliver the industry's best defect performance (<10 @ 0.12μm) and operates at a lower cost of consumables than other available barrier deposition systems. Thinner film and less pasting also significantly lower the cost of ownership per wafer.

It is the first PVD chamber to feature a flux-shaping, dual-magnet source, Extensa TTN's high-ionization magnet improves step coverage for advanced features (>40% for 0.10μm 4:1 aspect ratio), with low center-edge bottom and sidewall asymmetry (~1:1). Side electro-magnets enable process tuning flexibility to accommodate different types of features and to compensate for etch-related variations in feature size.

Extensa TTN is configured on the industry-leading Endura platform, delivering optimal system reliability on the only integrated single-system configuration available today for Cu interconnects.

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