Metal Gate Transistors

Centura RP Epi

The Applied Centura RP Epi offers a complete suite of Epi solutions for semiconductor manufacturing, from substrate formation to advanced logic and memory applications. The system enables strain engineering in logic through selective SiGe recessed source/drain to deliver exceptional drive current improvement. In DRAM, Centura RP Epi for elevated source/drain improves yield and retention time.

With a new optional pre-clean chamber, the Applied Centura RP Epi offers low-temperature, plasma-based, integrated pre-clean product for Epi applications, making true low-temperature Epi for leading-edge technologies practicable. Combining production-proven Siconi plasma dry clean technology and Applied Materials’ leading Epi processes on one system eliminates the HF dip and subsequent high-temperature hydrogen bake steps that pose growing challenges as devices scale beyond 32nm. In addition, elimination of queue time control issues simplifies fab operations and reduces wafer scrap resulting from queue time limit violations.

Proprietary Epi chamber technology and a robust platform result in tight manufacturing process control and world-class production-worthiness.

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