Semiconductor

Centura POLYgen LPCVD

Key Features

  • Optimized temperature uniformity for applications from 400-800°C
  • Control of grain size and orientation to deliver wide range of film morphology, from amorphous silicon to randomly-oriented, micro-crystalline grains to columnar grains
  • Capable of depositing in-situ doped silicon (P, As doping) and polycrystalline Si1-xGex

Applied Centura POLYgen LPCVD (Low Pressure Chemical Vapor Deposition) combines advanced process capability with production-proven hardware, offering film morphology control and in-situ doping with exceptional film uniformity. Integration with the oxynitride formation has proven to reduce EOT by >1Å. In-situ cleaning capability ensures high productivity.

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