Centura iSprint Tungsten ALD/CVD

The Applied Centura iSprint Tungsten ALD/CVD (Atomic Layer Deposition/Chemical Vapor Deposition) system provides complete contact/via fill for high aspect ratio structures and extends the capability of tungsten technology to 45nm/55nm for Logic and Memory applications.

The system combines innovative ALD tungsten nucleation layer technology with the high-throughput Sprint CVD tungsten bulk fill process to deliver void-free, CMP-compatible tungsten plugs.

The ALD process reduces the nucleation thickness from typical CVD values of 300Å to as thin as 12Å, while maintaining excellent barrier performance for reliable, repeatable integration with PVD Ti/MOCVD TiN liner/barriers.

The iSprint system also provides high throughput and low cost of consumables with the optimized ALD chamber design which features a proprietary rapid gas delivery system and small chamber volume that enable fast, effective gas purging with lower gas usage.

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