Aera3 Mask Inspection

The Applied Aera3 Mask Inspection system introduces unique capabilities for qualifying the full range of masks used for 22nm logic/32nm memory technology nodes and for early learning EUV mask inspection. It is a third generation production-worthy inspection tool that uses true aerial imaging with a 193nm source for inspecting the reticle as it will appear in the wafer plane to predict defect printability.

Designed to emulate a scanner and with superior signal-to-noise performance, Aera3 clearly identifies signals from defects of various types and locations regardless of their root cause; these signals in turn correlate closely with the effects each defect would create on the wafer. Thus defects are automatically classified as non-printing or printing relative to a given print threshold value. Aera3 performs highly sensitive mask inspection, as required for double patterning lithography technologies, while maintaining a very low false alarm rate for advanced masks. By enabling printability prediction, Aera3 offers a capability absent in standard high-resolution inspection systems and cuts inspection time to 1 hour for today's shortest time to decision. All mask technologies can be inspected as aerial imaging inherently accounts for mask-related phenomena associated with the range of resolution enhancement techniques used at advanced nodes, e.g., source-mask optimization technologies.

Equipped with IntenCD for high-density, high-precision scanning of the entire reticle, Aera3 can generate maps of CD uniformity trends that could signal manufacturing process problems and allow corrective measures. Global trends can be resolved to approximately 1nm. Mapping occurs concurrent with inspection and can be performed for a range of applications and simultaneously for multiple feature sizes.

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