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p-Type Si Passivated Emitter Rear Contact

pPERC cells typically have a greater than 0.6% CE gain over standard Al BSF cells, due to the deposition of AlOx and SiNx on the wafer back, resulting in reduced carrier recombination losses and improved backside reflection.

pPERC cells also benefit from excellent junction quality by Solion XP ion implant, and reduced Ag paste consumption using Fine Line Double Print with Esatto Technology.