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Producer® Black Diamond® PECVD

Applied Producer Black Diamond 3 extends Applied’s leadership in nano-porous low-k dielectric technology to enable the scaling of advanced interconnects to 28nm and below.

Russ Perry explains the evolution of low-k films and the benefits of the newest member of the Black Diamond family of dielectrics.

The Black Diamond II nano-porous low-k film is the industry standard for the 45/32nm copper/low-k interconnects, with a k-value of approximately 2.5. Its predecessor, Black Diamond (k~3.0), is the industry-standard for the 90/65nm nodes. Creating nano-porous low-k film is a two-step process consisting of PECVD deposition of an organosilicate glass “backbone” and a thermally labile organic phase, followed by an ultraviolet (UV) cure that removes the labile phase—thereby inducing porosity—and restructures and strengthens the remaining silicon-oxide matrix to form the final nano-porous film. Small average pore size and tight pore size distribution eliminate the need for pore sealing.

The next-generation Black Diamond 3 film extends this industry-leading technology to ultra-low-k (ULK) film (k~2.2) for scaling to 22nm and below and improving device speed. It also imparts the mechanical strength (hardness and elasticity) required by emerging advanced packaging schemes. The film exhibits excellent moisture resistance, stable k-value after etch and photoresist removal, and superior mechanical strength.

The Producer Black Diamond 3 system is designed to work with the Applied Producer Nanocure™ 3 UV curing system. The Nanocure 3 system employs a high-intensity UV source to stabilize and densify the Black Diamond 3 film to provide optimum mechanical and optical properties.

This two-step deposition and cure process provides up to twice the mechanical strength of Applied’s successful second generation Black Diamond film – reducing device variability and boosting chip yield.