The Applied Reflexion LK Ecmp system provides breakthrough electrochemical mechanical planarization technology on the production-proven Reflexion LK platform to meet today’s 65nm performance and cost requirements, while providing extendibility to 45nm and beyond. With its unique electrochemical approach and near-zero shear force planarization, the system can precisely control removal rates and virtually eliminate dishing and erosion to produce a very smooth topography with no structural or mechanical damage to interconnect layers. This resulting near-perfect planarization maximizes the depth of focus budget to extend existing lithography schemes.

Reflexion LK Ecmp delivers excellent profile and endpoint control for outstanding within-wafer and wafer-to-wafer thickness control. The post-CMP Desica cleaner, with its unique integrated full-immersion Marangoni vapor drying, offers superior clean and dry capability ensuring dramatically reduced defect counts on both hydrophilic and hydrophobic surfaces.