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AKT®-PiVot™ DT PVD

The Applied AKT-PiVot 55K DT PVD, Applied AKT-PiVot 25K DT PVD and Applied AKT 55KS PECVD systems extend Applied’s leadership in metal oxide (MO) films and technologies for smaller, faster thin film transistors (TFTs) required to create high-resolution displays. Through precision materials engineering and productivity innovations, these systems provide an optimized, cost-effective solution for volume production of future MO-enabled displays.

The AKT-PiVot 55K DT PVD and 25K DT PVD systems deposit critical film layers that create TFTs and interconnects on 2200mm x 2500mm and 1500mm x 1850mm glass sheets for flat panel displays, supporting multiple technology roadmaps for manufacturing large-area TVs or energy-efficient screens for mobile devices. The superior uniformity, particle and stability performance of the AKT-PiVot helps display manufacturers produce faster and smaller transistors for ultra-high resolution (UHD) displays with rapid refresh rates.

The AKT-PiVot system’s modular architecture delivers significantly faster cycle time and enables a large variety of configurations to maximize production efficiency. Unlike traditional in-line systems, the AKT-PiVot’s parallel processing capability provides high production capacity in a small footprint and eliminates bottlenecks caused by different process times for each film layer. The system’s cluster-like arrangement also allows continuous operation during individual module maintenance.

Proprietary rotary cathode technology enables nearly 3x higher target utilization than any competitive system. Each deposition module of the PiVot system features an array of large-volume, rotary targets that have >4x longer lifetime than conventional planar targets. The PiVot system’s deposition modules feature an innovative pre-sputter unit that enables target conditioning using only one substrate, rather than up to 50 substrates that are needed with other systems to achieve the same results.

For MO-based TFTs, the AKT-PiVot system deposits the critical transistor MO channel material, IGZO, with unprecedented uniformity and stability using rotary cathode technology. The AKT-PiVot system is the only IGZO solution capable of overcoming the “mura effect” – a critical unmet challenge that has hindered MO technology from mainstream acceptance for LCDs. In addition, the breakthrough stability of PiVot-deposited IGZO films offers the promise of using MO backplanes for OLED displays, significantly lowering cost and helping to make large-area OLED televisions affordable.

As TFTs get smaller and substrates get larger, the impact of uniformity and particles on yield is significantly magnified. The systems’ self-cleaning rotary targets with directional plasma control deliver notably fewer defects and outstanding uniformity compared to conventional planar targets. To effectively provide this high-value performance cost, the system’s independent dual processing tracks on a single platform provide high production capacity in a small footprint. The deposition of robust, mura-free IGZO films, combined with uniform, low defect metals, pixel electrodes and new integrated passivation layers (AlOx), allows for unprecedented technical performance and flexibility.

Using the PiVot system, FPD manufacturers can transition from aluminum to copper interconnect bus lines to achieve faster pixel response and lower power consumption in next-generation LCD-TV panels and screens for mobile devices. Key to the PiVot system’s superior film quality is its proprietary rotary cathode design that employs unique deposition modulation technology to deposit copper layers with uniform grain distribution, low resistivity and high thickness uniformity. The PiVot system also enables greater than 80% target utilization to provide significant savings in expensive target material.