The Applied Centura AdvantEdge G5 Silicon Etch system for advanced memory and logic offers leading on-wafer performance and productivity for the most demanding applications at 45nm-32nm, such as shallow trench isolation and recessed channel array transistor. Leveraging established AdvantEdge system performance tuning capabilities, this generation of the system features chamber and RF design improvements that deliver the center-to-edge capabilities to achieve ±1% depth-uniformity. Specialized chamber materials lower defect count and improve mean time between cleans.
The AdvantEdge system’s wafer temperature tuning offers both a greater range of center-to-edge thermal gradients and superior temperature uniformity. Optimum chamber thermal conductivity eliminates first-wafer effects and facilitates uninterrupted processing of successive wafers; temperature-controlled surfaces guarantee wafer-to-wafer process repeatability. A fast ramping rate facilitates rapid step-to-step optimization over a wide temperature range. The system’s advanced thermal control plus the chamber’s tunable dual-coil source, optimized gas distribution, and dual-zone helium cooling create a uniformity tuning window for the most stringent CD control and consistency across the wafer. Compact system configuration, simplified design, and lightweight components streamline serviceability and trim mean time to clean and recover.
Onboard fast data acquisition and high volume/high speed data streaming facilitate advanced process control. Process state monitoring capabilities enable process and productivity improvements, chamber matching, and more efficient routine maintenance scheduling.
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