The Applied Centura Advanced Gate Stack system addresses the future of high performance gate dielectric requirements by depositing an integrated high-k dielectric stack of materials that allow scaling the effective oxide thickness (EOT) and minimizing gate leakage. Below 12A oxynitride thickness, the transistor reaches a barrier where further physcial scaling is limited by an unaccpetable increase in gate leakage.

Through its unique integration of high-k ALD, DPN (decoupled plasma nitridation), RadOx oxidation and Radiance anneal chambers on a single Centura platform, the Advanced Gate Stack creates high-mobility, low-leakage high-k dielectric stacks. Fundamental to transistor performance is the atomically engineered interface between the dielectric layers: by depositing a precision engineered high-k ALD film on a proven SiON interface layer, the Advanced Gate Stack enables next-generation transistor performance with <9A EOT and 100X gate leakage improvement over traditional dielectrics.

The Advanced Gate Stack features:

• Innovative high-k chamber designed for thermal and flow stabilities needed for a manufacturably repeatable process
• Compability with existing Centura-based technologies for production-proven integrated solutions