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| Ion implantation is a key technology in forming the transistor structures of all semiconductors and may be used many times during chip fabrication. During ion implantation, silicon wafers are bombarded by a beam of electrically charged ions, called dopants. Implantation changes the properties of the material the dopants are implanted in, to achieve a particular electrical performance. These dopants are accelerated to an energy that will permit them to penetrate ("implant") the film to the desired depth. Dopant concentration (or "dose") is determined by controlling the number of ions in the beam and the number of times the wafer passes through the ion beam. The beam energy determines the depth at which the dopant will be placed. |
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