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| Dual damascene is the name of a new technique for forming interconnect structures based on conductive copper metal lines inlaid into an oxide or low dielectric constant (k) nonconductive layer. The dual damascene technique relies upon plating of the metal into preformed trenches. Then chemical mechanical planarization is used to remove excess metal from the wafer surface. The process has been adopted for forming copper interconnects because traditional plasma etch techniques cannot be used for patterning copper films. Copper/low k interconnects formed by the dual damascene technique can be used in manufacturing either DRAM or logic devices. |
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