Atomic Layer Deposition (ALD) is a technique that deposits films one atomic layer at a time, allowing process control to achieve ultra thin films. In ALD, reactants are introduced one at a time, with pump/purge cycles in between. ALD reactions are self-saturating surface reactions, limited only to a single layer on the exposed surface to result in a 100% conformal film. Sequential cycles of these reactions enable thickness to be controlled very precisely.
