Applied Materials invites you to join us for a technical symposium and reception at the Ambassador Hotel Hsinchu. The symposium will offer an opportunity for in-depth technical discussion of key challenges and advances in next-generation memory transistor design and manufacture.

The modern MOSFET era has seen numerous changes in transistor materials and fabrication. Now, endurance, power consumption, and structure complexities that limit yield and increase cost are becoming major concerns in planar memory device scaling beyond the 2x nm node. This is driving development of 3D solutions, such as vertical NAND and several other more scalable volatile memory technologies (e.g., ferroelectric, magnetic, and phase-change) as potential successors to Flash, DRAM, and SRAM.

Distinguished guest speakers from
SK hynix, Technische Universität München, and Toshiba will address these challenges and emerging solutions.

We look forward to welcoming you!