Reflexion LK CMP

Applied Reflexion LK CMP provides production-proven, high performance planarization solutions for copper damascene, shallow trench isolation (STI), oxide, polysilicon, and tungsten applications. Its high-speed planarizing platens and multi-zone polishing heads enable superior uniformity and efficiency with low downforce for extendibility to <45nm device generations.

The integrated post-CMP Desica cleaner uses unique full-immersion Marangoni vapor drying technology to virtually eliminate watermark defects and dramatically reduce particle contamination. The wafer is so clean after CMP (<100 45nm defects on a 300mm wafer) that compared to the entire surface area of the earth, the remaining contaminants would cover only 0.3 acres, the size of a medium sized suburban garden.

The Applied Reflexion LK CMP system also implements a full suite of endpoint methods, in-line metrology and advanced process control capabilities that ensure excellent within-wafer and wafer-to-wafer process control and repeatability for all planarization applications. Its patented window-in-pad technology enables accurate real-time polish control of every wafer without compromising throughput. The new FullVision in-situ endpoint system, for all stop-in and stop-on dielectric applications, uses broadband spectroscopy to significantly improve Cpk and minimize wafer scrap caused by drifts in consumable sets and incoming wafer variations.

View more CMP tools and other semiconductor technologies.