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Centura® iSprint™ Tungsten ALD/CVD

The Applied Centura iSprint Tungsten ALD/CVD system provides complete contact/via fill for structures with aspect ratios ranging from 4:1 to 7:1 and extends the capability of tungsten technology to 20nm/16nm for logic and memory applications.

The system combines innovative ALD tungsten nucleation layer technology with the high-throughput Sprint CVD tungsten bulk fill process to deliver CMP-compatible tungsten plugs.

The ALD process reduces the nucleation thickness from typical CVD values of 300Å to as thin as 12Å, while maintaining excellent barrier performance for reliable, repeatable integration with PVD Ti/MOCVD TiN liner/barriers.

iSprint 시스템은 또한 빠르고 효과적인 가스 배출을 구현해 가스 사용량을 줄여주는 독자적인 고속 가스 공급 시스템과 작은 챔버 체적을 특징으로 하는 최적화된 ALD 챔버 설계가 적용된 고효율 저비용 소모 재료비를 제공합니다.