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| Applied Materials Invites You to Join Us |
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| Endurance, power consumption, and structure complexities that limit yield and increase cost are becoming concerns in memory scaling beyond the 2x nm node. Today, several new and more scalable resistive and magneto-resistive RAM technologies are under development as potential successors to Flash, DRAM, and SRAM. Does one present decisive cost or performance advantages over the other? What new material and processing challenges do they pose? How will they change memory architecture? |
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| Join our panel of distinguished speakers from ARM, CEA/Spintech, IBM, Micron, and Technische Universität München, as they address such questions and their influence on future memory device development. Moderated by a representative from the Applied Materials Silicon Systems Group, we anticipate that this will be a highly informative and animated discussion. |
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If you have questions about this session, click here to contact Gill Lee.
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PANEL SESSION & RECEPTION
Melia Milano Hotel
Milan, Italy
Monday, May 21
Applied Materials Sponsored Panel Session
May 21: 16:30 – 18:00 PM
Applied Materials Sponsored Poster Session & Reception
May 21: 18:00 – 20:30 PM
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