Applied Materials continues the product innovation that forms the foundation of our technical leadership in semiconductor manufacturing. We anticipate complexities in new materials, device design, and integration schemes that face our customers. Our uniquely broad base of technical expertise and experience, and collaborative approach to R&D, testing, and optimization expedite solutions to customer's increasingly difficult challenges.

2011 Investor & Analyst Meeting

• Randhir Thakur: Growth Through Technology Leadership
• Klaus Schuegraf: Transistor Inflection: Complexity of High-k Metal Gate
• Sesh Ramaswami: Wafer-Level Packaging Inflection
• Video: Semitool Testimonial
• Video: Silicon Systems Overview
• Breakout Session Presentation

Press Releases

• Applied Materials Blazes Path to Advanced Interconnects with Leading-Edge Copper Technology
• Applied Materials Extends RF PVD Technology to Enable 22nm Transistor Contacts
• Applied Materials Unveils Breakthrough Technology for Building 3D Transistors
• Applied Materials Expands the Limits of Darkfield Wafer Inspection with Deep Ultraviolet Laser Technology

Product Information

• Applied Raider GT Electrochemical Deposition
• Applied Endura Avenir RF PVD
• Applied Centura Conforma
• Applied DFinder Inspection

Technical Briefings

• Applied Raider GT Electrochemical Deposition
  Uniform, small feature fill for copper interconnect fabrication at 22nm and beyond (829KB, PDF)
• Applied Endura Avenir RF PVD NiPt
  Enabling advanced silicides (1.4MB, PDF)
• Applied Centura Conforma
  Breakthrough conformal plasma doping technology for building 3D transistors (1.2MB, PDF)
• Applied DFinder Darkfield Inspection
  First deep UV darkfield tool with best sensitivity to particles-on-pattern (4.5MB, PDF)

Articles

• Design and Simulation of the Semitool CFD Plating Reactor, Applied Materials ET Conference 2010 (302kB, PDF)
• Enabling Metal Deposition Technology for High-k Metal Gate Integration, Advanced Metallization Conference Proceedings, September 2008. (1.6MB, PDF)
• Enabling Effective Work Function Tuning by RFPVD Metal Oxide on High-k Gate Dielectric, 213th Electrochemical Society Meeting. * (152kB, PDF)
• High-k / Metal Gate Stacks in Gate First and Replacement Gate Schemes, Advanced Semiconductor Manufacturing Conference, July 2010. ** (689kB, PDF)

* © The Electrochemical Society

** ©2010 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Applied Materials' products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.