Adesto Technologies Wins DARPA Award to Develop Sub-Threshold Non-Volatile, Embedded CBRAM Memory

12月 01, 2010

Sunnyvale, California. (BUSINESS WIRE)--‐--‐ Adesto Technologies, the leading developer of Conductive Bridging RAM (CBRAM), a low power and low cost CMOS non--‐volatile memory, is announcing that it has received an award from DARPA to develop and demonstrate CBRAM memory devices that operate at sub--‐threshold voltages – a level that is more than 10 times lower than standard Flash memory. A successful demonstration of the CBRAM technology could lead to groundbreaking memory and microcontroller devices that consume orders of magnitude lower power.

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