Applied Materials Invites You to Join Us

for a technical symposium followed by an evening reception at the elegant Intercontinental Seoul Coex Hotel.

Beyond the 2x nm node, research in magneto-resistive RAM (MRAM) technologies is demonstrating superior scalability and performance. Spin-transfer torque (STT) MRAM shows the most promise of the MRAM approaches for replacing high-end DRAM and embedded SRAM. Experts from industry-leading R&D teams from IBM, Qualcomm and AIST will highlight findings and discuss lessons learned from their research on STT-RAM technology while Applied Materials technologists will address potential implementation approaches.

We look forward to welcoming you!

Technical Symposium
STT-MRAM: From Research to Production

Intercontinental Seoul
Coex Hotel
Thursday, February 9
14:00 – 17:30
Reception following