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Centris™ AdvantEdge™ Mesa™ Etch

The Applied Centris AdvantEdge Mesa is Applied’s most advanced silicon etch system, delivering the precision, intelligence, and productivity needed for the successful fabrication of advanced logic and memory chips at 22nm and below. Featuring Applied's industry-leading AdvantEdge Mesa etch chamber technology, the Centris system can create nano-scale circuit features with angstrom-level uniformity on every wafer. This capability is essential to achieving high yields in volume chip manufacturing.

Mike Rice introduces the Centris etch platform designed for nano-scale precision and high productivity.

The groundbreaking Applied Centris platform clusters up to eight process chambers – six etch and two plasma clean chambers. A high-speed transfer robot enables the processing of up to 180 wafers per hour – making the system nearly twice as fast as competing alternatives.

The two plasma clean chambers, which remove post-etch halogen residues, are incorporated into the vacuum loadlocks. This unique innovation enables an unprecedented number of etch processing chamber locations and doubles the capacity of traditional silicon etch systems.

Precisely matched performance from all six etch chambers is made possible by proprietary “smart” system monitoring software and NIST-traceable reference standards, assuring industry-leading, sub-nanometer CD uniformity (3σ) on every wafer processed. In addition to unmatched wafer-to-wafer repeatability, the Mesa technology delivers truly flat, uniform etch profiles from edge-to-edge within the wafer, enabling precise transfer of lithography patterns to significantly increase die yield. Optional Pulsync technology adds innovative synchronized plasma pulsing capability for refined plasma control that substantially reduces microloading to optimize patterning and etch precision.

Designed to help chipmakers support their sustainable manufacturing initiatives, the Centris platform consumes substantially less water and energy than other mainframes, enabling typical annual savings in power, water and gas consumption equivalent to 600,000 pounds of CO2 emissions* and contributing to a cost of ownership 30% less than other available systems.

The Centris AdvantEdge Mesa system is targeted for etching critical shallow trench isolation, buried bit and word lines, and double patterned chip structures. The system’s best-in-class performance delivers 1% etch depth non-uniformity and sub-nanometer CD uniformity, helping customers shrink circuit features, control leakage current and achieve the high production yields necessary to build tomorrow’s highly complex chip designs.

* Calculated using SEMI S23 methodology
** Copyright ⓒ 2009 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Applied Materials' products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
*** Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in The Journal of Applied Physics 106, 1-3305, 2009 and may also be found at http://jap.aip.org/resource/1/japiau/v106/i10/p103305_s1
**** Posted with permission from ECS Transactions, 27 (1) 717-723 (2010). Copyright 2010, The Electrochemical Society