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Endura® Versa™ XLR W PVD

In advanced devices, the speed of data transfer from DRAM structures becomes a factor limiting system performance. Speeding this data transfer requires faster periphery gates and contacts. The Endura Versa XLR W PVD system enables the lowest resistivity memory gate electrodes by enabling deposition of low-resistivity tungsten films. 

Tungsten can be used for gate stack in 3D device architectures without changing process flows or integration schemes. And designers benefit from the resulting greater flexibility in circuit layout. In addition, a doubling of the process kit service life over that of previous PVD tungsten technology translates into a 10% reduction in the cost of consumables per wafer.