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Endura® HAR Cobalt PVD

In advanced devices, the speed of data transfer from DRAM structures becomes a factor limiting system performance. Speeding this data transfer requires faster periphery gates and contacts. The Endura HAR Cobalt PVD system lowers resistance in periphery contacts to enable higher drive current at lower voltage.

The system integrates Siconi pre-silicide clean with PVD cobalt and TiN cap deposition for the direct contact application in the DRAM periphery. Cobalt silicide enables the lowest resistance for high aspect ratio periphery contacts, making possible higher drive current at lower voltage and outperforming CVD titanium silicide technology.